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As device dimensions shrunk to the 14 nm node and beyond, damascene Cu/low-k high aspect ratio of interconnect schemes face extreme difficulties in achieving defect-free Cu gap-fill. The CVD Co was implemented to improve Copper interconnect performance which was deposited between the PVD Ta(N) liner barrier and the Cu seed layer to improve copper to barrier adhesion and copper gap fill. Therefore,...
The cleaning method using cyanide solutions has been developed to remove heavy metals such as copper (Cu) and nickel (Ni) from Si surfaces. Immersion of Si wafers with both Cu and Ni contaminants in potassium cyanide (KCN) solutions of methanol at room temperature decreases these surface concentrations below the detection limit of total reflection X-ray fluorescence spectroscopy of ~3x10 9 ...
This work investigates the effects of BF 2+ implantation on the oxidation resistance of copper films. The BF 2+ ions were implanted into Cu films through a 1000 a thick screen SiO 2 layer. We found that the oxidation resistance of Cu films can be significantly improved by BF 2+ implantation at appropriate conditions. In particular, BF 2+ ...
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