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Ion implantation profiles of boron after a BF3 plasma immersion ion implantation in a plasma implanter with a pulsed voltage ion extraction were investigated both experimentally and by means of numerical simulation. Boron profiles for different ion implantation doses in the range 1015 to 1017 cm−2 were measured using the SIMS method. Simulations were performed using a Monte-Carlo based binary-collision...
In this work, the influences of advanced annealing schemes, spike and flash annealing and combinations of them, on the electrical behavior of modern FD SOI MOSFETs have been investigated by numerical simulations. Process simulations have been performed for comparing the two-dimensional diffusion behavior of the dopants under the different annealing schemes. Device simulations have been performed for...
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