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The hole mobility in a high Ge-content (110) SiGe inversion layer is measured and simulated by a split capacitance–voltage method and a quantized k⇀·p⇀ method, respectively. The calibrated model reproduces our experimental channel mobility measurements for the biaxial compressive strain SiGe on (110) substrate. We also explore the impact of external mechanical uniaxial stress on the SiGe (110) p-channel...
An effect of stress distortion on the conduction band structure was derived by k.p method considering a second order perturbation. From k.p conduction band calculations, stress-induced band edge split and the change of effective mass are quantitatively evaluated. The physical reasons of warped subband structure and abnormal mobility enhancement by uniaxial stress are investigated. Variation rates...
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