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Photonic integration is as an enabling technology for photonic quantum science, providing great experimental scalability, stability, and functionality. Although the increasing complexity of quantum photonic circuits has allowed proof-of-principle demonstrations of quantum computation, simulation, and metrology[1], further development is severely limited by the on-chip photon flux that can be made...
913 nm tapered diode lasers with 23th order laterally coupled grating is fabricated. Power of over 560 mW/facet and lateral divergence angle of 2.1° are achieved. Measured side mode suppression ratio is about 27 dB.
Integrated components for optical networks-on-chip, including III-V microdisk lasers, photodetectors, and wavelength selective circuits, are all demonstrated using a complementary metal-oxide-semiconductor (CMOS) compatible III-V/silicon-oninsulator integration technology at 200mm wafer scale.
We demonstrate flip-flop operation using the directional bistability in ultra-small microdisks (7.5 μm diameter) heterogeneously bonded on a silicon chip. The pulse energies are only 1.8 fJ and the bias current is 3.5 mA.
We give proof of concept demonstrations for the use of a single InP membrane disc structure as both a directly modulated light source and photo-detector using a 27 -1 PRBS sequence at rates up to 10 Gb/s.
A novel Mach-Zehnder modulation technique based on a 1-3 multimode interference coupler and three optical phase-modulator waveguides for the generation of optical single sideband (SSB) signals in the radio-over-fibre millimeter-wave system is proposed. Two of the three modulator arms are biased by the direct current (DC) voltage and modulated by the radio frequency (RF) signal in the same way as conventional...
Using a 7.5 ??m wide InP Micro-Disc-Laser, with a very low ~100 ??A threshold current, heterogeneously integrated on top of Silicon on Insulator substrate, all optical NRZ wavelength conversion at speeds up to 20 Gb/s is demonstrated.
To investigate the potential for dense integration of photonic components, we analyse passive plasmonic/metallic waveguides and waveguide components at optical frequencies by using mostly microwave engineering approaches. Four figures of performance are formulated that are utilised to compare the characteristics of four different slab waveguides with zero frequency cut-off modes. Three of these are...
This paper diagnoses the emission spectra of the Ar plasmas, which are excited at different pressure from 0.1 to 0.8 atm, and Ar-air plasma in open air with a unique microwave plasma generator-APMPS+JET system. The results demonstrate that the previous excited atom stations die out obviously as air is added; various factors play a part in the transform of atomic spectra lines, such as energy input,...
We demonstrate enhanced nonlinearity in an SOI microcavity by heterogeneously integrating a III-V overlay on top of the SOI waveguide layer. Nonlinear transmission and all-optical modulation is observed.
III-Vsilicon-on-insulator photonics comprises the heterogeneous integration of a III-V layer on top of an SOI waveguide circuit. We elaborate on the fabrication technology and the realization of III-V/SOI photonic integrated circuits.
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