The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, the reliable SiNx/AlGaN/GaN MISHEMTs on silicon substrate with improved trap-related characteristics have been well demonstrated. The devices with our proposed treatment method showed less deep-level traps and more Si surface donors at SiNx-AlGaN interface. The trap related device characteristics are also improved by using our optimized treatment method. The devices with proposed treatment...
CMOS-compatible GaN-on-silicon technology with excellent D-mode MISHFET performance is realized. A low specific contact resistance Rc (0.35 Ω-mm) is achieved by Au-free process. MIS-HFET with a gate-drain distance (LGD) of 15 μm exhibits a large breakdown voltage (BV) (980 V with grounded substrate) and a low specific on-resistance (R ON,sp) (1.45 mΩ-cm2). The importance of epitaxial quality in a...
In this article, we show that the introduction of a spiral waveguide to a GaAs microdisk that works both as a waveguide and circular Bragg reflector can improve coupling efficiency to almost 90%. The same structure with the addition of a taper can couple up to 80% of the generated power into a slot waveguide.
We have demonstrated a high performance 80nm gate In0.52Al0.48As/In0.53Ga0.47As/InAs0.3P0.7 composite channel HEMT. The device has a gm as high as 1 S/mm and an fT 280 GHz. To complete this study, the noise and power performance of such device will be further studied and compared with conventional InGaAs channel devices in near future.
A Fabry-Perot reflection modulator with integrated quarter-wave mirrors using indirect bandgap AlGaAs/AlAs quantum wells as the cavity material is reported. A total reflectivity change of approximately 30% and insertion loss of 2.3 dB at a wavelength of 609 nm are achieved.<<ETX>>
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.