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Contrary to recent claims, experimental results obtained in thin and thick Hafnium-based high-K gate dielectric stacks demonstrate that progressive breakdown is relevant in these insulators. For thin and thick stacks and both in NFETs and PFETs, the residual time distributions are found to be non-Weibull with two regions: a universally shallower slope at long times and a steeper slope at short times...
Summary form only given. Silicon carbide nanowires with junctions are considered to be of potential value in nanoelectronics. A simple method by catalyst-assisted vapor-liquid-solid reaction for producting Y-junction silicon carbide nanowires is described. The Y-junction silicon carbide nanowires are investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). It...
Summary form only given. Large scale SiC/SiO2 nanowires have been synthesized on Si (100) by the reaction of methane with silica using iron as catalyst. The growth time was 10 mins and the growth temperature was around 1,250°C in a normal atmospheric pressure. Detailed investigation with scanning electron microscopy (SEM), energy-dispersed X-ray (EDX), X-ray diffraction (XRD) and transmission electron...
In this work, Fe65Co35 alloy which has maximum saturation magnetization (Ms) among all metal magnetic materials was chosen to make Fe65Co35-SiO2 granular films, and the magnetic properties in whole composition were studied. The results show that good high frequency soft magnetic films were obtained by carefully controlling the microstructure. A serious (Fe65Co35)x(SiO2)1-x granular films are fabricated...
The reliability of a two-level electromigration structure stressed under various conditions is described. The structure consists of Cu dual damascene metallization with SiCOH as the low-k dielectric. A new electromigration test system is implemented to greatly increase the sample size without significantly increasing the hardware requirements. Due to the presence of two failure modes, the statistical...
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