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Alternate deposition and anneal cycles involving the deposition of 100 9 of Pd metal and annealing at 350 o C are used to grow thick Pd 2 Si films on Si(111). The surface ordering and bulk crystal properties are compared to films grown by using a single deposition of 200-600 9 Pd metal followed by annealing at 350 o C to give the same nominal Pd 2 Si film thickness...
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