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Heavily doped silicon nanowires (SiNWs) are adopted to fabricate a memory device composed of an AlON tunnel layer and a charge trap bilayer, which exhibits a large memory window of 4.6 V when operated in the program/erase phases, i.e., 12 V for 100 and 12 V for 10 ms, along with excellent 70% extrapolated ten-year data retention and good endurance up to ...
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