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Local terahertz fields of multiple 10 MV/cm tailored in gold metamaterials drive electronic interband transitions in intrinsic GaAs. The bandgap exceeds the THz photon energy 400-fold. Photoluminescence microscopy maps the THz near-field distribution.
We observe a strong ultrafast AC Stark shift of the direct band transition in strained germanium quantum wells grown on silicon. At 150 meV, the maximum measured blue shift of the band edge is one order of magnitude larger than typically found in III-V materials [1]. The power dependence shows a linear behavior between the electrical field intensity and the magnitude of the shift which is in good...
Time-resolved terahertz spectroscopic studies were carried out on bulk InP to measure photoconductivity on the picosecond timescale. Comparison of the carrier multiplication quantum yields obtained with those of colloidal InP nanoparticles clearly demonstrate the potential benefit of InP nanoparticle-based next-generation solar cells.
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