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The effect of electron-electron interactions on the ionisation rate is investigated. It is shown that this effect may be a power and efficiency saturation phenomenon for GaAs IMPATT diodes. This effect may become drastic if too high current densities are used, and this particularly may be the case in the millimetric frequency range.
The letter investigates the influence of a thermionic-type injected current on the dynamic operating conditions and performance of GaAs impatt diodes. For this study, the computer program developed for high-efficiency impatt diodes has been used extensively. The work shows that interesting results can be obtained in X-band and that the practical realisation of such a device would be possible by using...
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