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Selective-area growth of high-density GaN nanowires on Si(111) substrate by plasma-assisted molecular beam epitaxy is studied. AlN nanopedestals used as nanowires growth seeds are fabricated by nanoimprint lithography. GaN nanowires with hexagonal cross-section show the best optical quality with a strong resonant emission at 3.457eV.
In this paper, the effects of process parameters, including nanopore formation, nanopore size, and surface cleaning conditions after nanopore formation on the characteristics of InAs SCQDs grown on GaAs are examined. The influence of MBE growth parameters on SCQD formation and approaches toward optimization of structural and optical properties will also be discussed.
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