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In this work the proton irradiation influence on basic and analog parameters of triple-gate SOI MOSFETs is investigated. The studied devices are strained and unstrained p- and nMuGFETs. The type of stress considered in each case, was the stress that results in a better performance of p- (CESL) and n-devices (sSOI+CESL). Although the results showed the worse behavior for post-irradiated nMOS transistors,...
Proton irradiation effects on fin-type field effect transistors (FinFETs) are examined from the viewpoint of their electrical-performance parameter of mobility. They are fabricated with various types of combination of strain/stress techniques to control their mobilities. The base stress level is globally modified by means of nonstrained or strained silicon-on-insulator wafers. Some process splits,...
Large SET broadening effects are shown in fully-depleted SOI inverter chains using laser irradiation. These broadening effects are due to significant floating-body effects in single transistors. Designing with body contacts can efficiently suppress these effects.
The authors propose a new method to estimate the local dielectric constant of an ultrathin gate insulator film formed on Si substrates by using X-ray photoelectron spectroscopy (XPS). First the authors measure the difference of core-level binding energy shifts for Si 1s and Si 2p, DeltaE1s DeltaE2p, for various Si compounds using high-resolution high-energy synchrotron radiation. the authors find...
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