The ultrafast carrier dynamics of Ge/SiGe quantum wells on Si substrate are investigated by pump-probe spectroscopy. Pronounced nonequilibrium effects in the relaxation dynamics and transient gain are observed and analyzed using a microscopic many-body theory.
Ultrafast carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate are investigated using pump-probe spectroscopy. Optical gain and population inversion are obtained on a femtosecond time scale. A microscopic theory supports the results.
Ultrafast carrier relaxation of Ge/SiGe quantum wells grown on a Si substrate are investigated using pump-probe spectroscopy. A nonthermal carrier distribution is observed. The corresponding inter- and intra-valley scattering times are deduced.
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