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3-D technologies open a wide range of chip integration possibilities for microelectronic systems. Most of these technologies are using through-silicon vias (TSV). One disadvantage of this technology is the high investment for new equipment and processing cost for Si etching and metallization. The thin chip integration technology (TCI) presented in this paper is based upon existing WLP infrastrcuture:...
Most of the wafer level 3-D technologies are using Through-Silicon Vias (TSV). The main barriers for these approaches are high cost, issues with electrical isolation within the Si via and the need of high investments for new equipment which is not used in WLP up to now. A planar integration technology of ultra-thin bare dice in a Wafer-Level Thin Film technology yield to a high-dense module will be...
3D system integration is a fast growing field that encompasses different types of technologies. The technology chosen for a specific application will be selected according to the required electrical performance of the systems, the footprint, cost and time to market. Other important factors are the boundary conditions given for the specific components e.g. die size, integration compatibility, component...
Heterogeneous integration bridges the gap between nanoelectronics and its derived applications. Currently MEMS and their signal conditioning ASICs are produced and packaged at different industry sectors (different fabs). To reduce costs and enhance yield and performance at the same time this quite expensive way of packaging has to be modified. This paper presents a different packaging concept. It...
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