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Silicon pad-detectors fabricated from diffused oxygenated silicon were irradiated with reactor neutrons with fluences between 1 times 1014 neq/cm2 and 1 times 1015 neq/cm2. The transient current technique was used to measure the trapping probability for holes and electrons. The results obtained support the model of a linear increase with fluence. Also the temperature dependence of the trapping time...
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