The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This study reports on the electrical characteristics of (110)-oriented nMOSFETs with a direct contact La-silicate/Si interface structure and the detailed comparison with (100)-oriented nMOSFETs. Precise control of oxygen partial pressure can provide the scaled EOT down to 0.73nm on (110) orientation in common with (100) orientation. No frequency dispersion in C gc –V characteristic for (110)-oriented...
Interface reactions of a Ce-oxide layer with Si(100) wafers have been characterized by X-ray photoelectron spectroscopy. The ratio of Ce atoms in Ce 3+ states within the Ce-oxide layer has been found to decrease from 47% at as-deposited sample to 26% after annealing. From detailed reaction analysis of valence number transitions of Ce atoms and the creation of SiO 2 layer at the interface,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.