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Peculiarities of mandrelling small diameter deep holes with high allowances, production tooling applied, holes accuracy and surface finish provided by the given processing technique are examined.
A 32 nm BEOL with PVD CuMn seedlayer and conventional PVD-TaN/Ta liner was fully characterized by fundamental, integrated, and reliability methods. CuMn was confirmed to have fundamental advantages over CuAl, such as higher electromigration (EM) reliability for the same Cu line resistance (R). Both low R and high reliability (EM, SM, and TDDB) were achieved. Improved extendibility of CuMn relative...
This paper provides development of an RF circuit software tool that generates diagnostic programs automatically for device interface boards. The diagnostic tool utilizes novel techniques to differentiate faulty RF circuits embedded in printed circuit boards. The diagnostic tool provides user-transparent pseudocodes with high fault coverage and significantly decreases time to market.
Cu and Ti films were deposited by sputtering on thermally oxidized Si wafers and then the deposited films were bonded by direct Cu-Cu thermo-compression bonding for evaluating the effect of the wet pre-treatment on the interfacial adhesion energy. The interfacial adhesion energy was evaluated as 0.29, 1.28, 1.64, 1.17, and 0.42 J/m2 by acetic acid pretreatment at 35degC for 0, 1, 5, 10, and 15 min...
There is no question that 3D integration will be the next generation of packaging. This requires new technologies from ultra thin wafer handling to wafer to wafer bonding with 3D inter substrate connections. TSV is a process in which wafers are thinned, stacked and interconnected to significantly improve electrical performance such as signal transmission, interconnect density, reduced power consumption,...
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