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A diode-pumped Q-switched Yb:KLu(WO4)2 mini-laser generated a maximum average output power of 170 mW at 1030 nm. The shortest pulse duration was 165 ns at a pulse repetition rate of 350 kHz.
A diode-pumped Tm, Ho:KLu(WO4)2 microchip laser Q-switched by a Cr2+:ZnS saturable absorber generated average output power of 131 mW at 2061 nm. The shortest pulses had duration of 9 ns and energy of 10 μJ.
In this paper, we have demonstrated 2.0 W of CW output power with a slope efficiency of 40% for Yb:CNGG and the passively Q-switched operation delivered 1.35 W of average output power at a PRF of 16.7 kHz. Here we demonstrate passive mode-locking of the disordered laser crystal Yb:CNGG using a semiconductor saturable absorber mirror (SESAM).
A 2-MeV electron injector for the Novosibirsk high-power FEL driven by a 100-MeV racetrack microtron-recuperator was built and commissioned in 1998. It is intended to supply electron bunches of ∼100 ps duration and repetition rate up to 22.5 MHz with average and peak current 45 mA and ∼20 A respectively. The RF-system of the injector is designed to provide stable operation under heavy beam loading...
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