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An 80GHz bandwidth distributed amplifier with 7Vpp differential output swing and PO1dB of 13 dBm per side, a 125GHz bandwidth PIN-diode SPST switch with 23dBm output compression point and over 22 dB of isolation up to 160 GHz, and a 40–100GHz bandpass filter with less than 3dB insertion loss are reported in a 90nm SiGe BiCMOS process. The circuits represent critical building blocks for analog transmitter...
This paper presents a carrierless RF-correlation-based impulse radio ultra-wideband transceiver (TRX) front-end in a 130-nm CMOS process. Timing synchronization and coherent demodulation are implemented directly in the RF domain, targeting applications such as short-range energy-efficient wireless communication at gigabit/second data rates. The 6-10-GHz band is exploited to achieve higher data rate...
We examine the feasibility of developing bipolar transistors with current-gain and power-gain cutoff frequencies of 1-3 THz. High bandwidths are obtained by scaling; the critical limits to such scaling are the requirements that the current density increase in proportion to the square of bandwidth and that the metal-semiconductor contact resistivities vary as the inverse square of device bandwidth...
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