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In this work a silicon based hybrid junction solar cell with a transparent conductive oxide (TCO) as top contact and including a layer composed by 3-aminopropyltriethoxysilan (APTES) and soluble graphene oxide (GO) with the structure of TCO/AGO/Si (where the layer formed by APTES and GO is referred to as AGO) was fabricated and tested. The realized structure had the typical scheme of a metal-insulator-semiconductor...
The interfacial layer in a Schottky barrier solar cell (SBSC) plays an important role in reducing the dark current, blocking the majority carriers injected into the frontal electrode at forward bias, reducing surface recombination velocity and passivating silicon surface. All these effects reflect into an improvement of the device performance.
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