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In this paper we report on a comprehensive study of Silicon-Germanium channel (cSiGe) physics, layout effects and impact on device performance. This work demonstrates a 2nd generation of dual channel technology, which meets the 22nm high performance technology (HP) requirement. Modeling and simulation are used to optimize the process to obtain a 10% Short Channel Effect (SCE) improvement and an overall...
?? Fast switching modular level (long term) based PBTI characterization was employed for accurate lifetime extraction at use conditions ?? Experimental evidence was presented suggesting the co-existence of two separate mechanisms responsible for PBTI induced VT instability each one dominating at different voltage regimes ?? Physical insights were discussed and a preliminary semi-empirical PBTI model...
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