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Electrical performance of MOS2 transistor, especially carrier mobility, can be greatly improved by screening the Columbic scattering by a high-k gate dielectric. In this work, Ti is incorporated into HfO2 to form HfTiO dielectric with a higher permittivity, which leads to further enhancement of the screening effect and thus carrier mobility. The effects of annealing ambient (N2, O2 and NH3) on the...
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