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A Si 5 C 3 type silicon carbon has been prepared via carbon ion implantation into silicon substrate using a MEVVA ion source. Carbon ions were implanted into silicon substrate at a fluence of 5×10 17 ions/cm 2 and then the as-implanted samples were annealed at 1250 °C for 2 h. The thermal annealing produced a silicon carbide layer on the surface of silicon substrate...
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