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A high density 50K∼100K/mm2 cross-tier connection featuring backside through-via (BTV) and wafer level 3D stacking technologies has been successfully demonstrated. Wafer stacking and thinning to < 1/250 Si thickness process showed little to no impact to advanced device performance. BTV induced stress effect was also studied; quite different behaviors between wafers with SiGe and without SiGe process...
The objective of this study is to propose an in-situ measurement of the warpage of the PCB during reflow process (or SMT process) using strain gauges. In the experiments, a full-field shadow moiré is used for measuring the out-of-plane deformations (or warpage) of a bi-material plate and the PCB with DIMM sockets during solder reflow heating. A finite element method (FEM) is used to analyze the thermally-induced...
This study is to numerically and experimentally investigate the effect of via-middle Cu through silicon via (TSV) on the mobility change (or related saturated current change, or drive current change) of transistors in the DRAM chip for 3D integration and further determine the keep-out zone (KOZ) in terms of key parameters such as SiO2 layer effect, zero-stress temperature, single and array vias, through...
As device scaling becomes increasingly difficult, 3D integration with through silicon via (TSV) has emerged as a viable solution for addressing the requisite bandwidth and power efficiency challenges. However, mechanical stresses induced by the TSVs must be controlled in the 3D flow in order to preserve the electrical integrity of front-end devices. Since copper filling material of the TSV could causes...
The purpose of this study is to in-situ measure the warpage of the PCB with surface-mount dual in-line memory module (DIMM) sockets during reflow process by using strain gages. In the experiments, a full-field shadow moire is used for measuring real-time out-of-plane deformations (or warpage) of the PCB with DIMM sockets under heating condition. A finite element method (FEM) is used to analyze the...
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