The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A copper-aluminium alloy (90:10wt%) has been investigated as a possible candidate for future interconnect applications. The tendency of the Al to segregate at the surface of the Cu following thermal anneal makes this alloy potentially suitable to function as a self-forming Cu diffusion barrier layer. X-ray photoelectron spectroscopy (XPS) and electrical characterisation measurements were used to study...
The chemical interaction of Al and Mn deposited on Ru thin films for use as copper diffusion barrier layers are assessed in-situ using x-ray photoelectron spectroscopy (XPS). Thin (∼1–2 nm) Al and Mn films were separately deposited on 3 nm Ru liner layers on SiO2, and both Al/Ru/SiO2 and Mn/Ru/SiO2 structures were subsequently thermally annealed. Results indicate the diffusion of both metals through...
In this x-ray photoelectron spectroscopy (XPS) study ultra-thin Si and MnO films were deposited on a range of low dielectric constant carbon doped oxides (CDO) with varying carbon content, in order to accurately determine the binding energy (BE) positions of the Si 2p and O 1s core level peaks as a function of carbon concentration. The results show a measurable correlation between carbon content and...
Synchrotron radiation photoelectron spectroscopy (SRPES) is used to investigate the in-situ formation of ultra thin Mn silicate copper diffusion barrier layers on SiO2. It was shown that high temperature annealing results in the growth of Mn silicate, the stoichiometry of which was calculated to be MnSiO3. SRPES results also show that the interaction of metallic Mn with SiO2 is self limiting at high...
In this study Mn silicate (MnSiO3) barrier layers were formed on ultra low dielectric constant (ULK) carbon doped oxide (CDO) surfaces, using both metallic Mn and oxidized Mn films. Using x-ray photoelectron spectroscopy (XPS) it has been shown that deposition of metallic Mn and partially oxidised Mn (MnOx where x < 1) films on CDO surfaces results in the formation of both MnSiO3 and a Mn...
In this paper, the electrical and structural analysis of HfO2 thin films formed by ion assisted deposition are reported. The electrical results show excellent layer uniformity and very good reproducibility before post deposition annealing. The influence of the oxygen flow during the growth upon the electrical properties of the film has also been investigated. Forming gas annealing removed the hysteresis...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.