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The performance of novel RF switching devices using insulating gate III-nitride metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) is demontrated. Initial results show that there is no degradation in the transmitted powers or gate leakage current during the 200+ hours stress with +30 dBm CW input powers. Multi-gate RF switching devices that increase the isolation in the...
A monolithic add-drop switch incorporating an InGaAs quantum-dot active layer is presented, and 10Gb/s dual wavelength operation is demonstrated. No impairment in device performance is observed as a result
In this paper, we investigate the effect to inkjet printing by modifying the surface condition of the substrate by plasma treatment as a possible processing technique to improve the printability and repeatability of ink-jet printed conductive ink on ITO coated substrate, and to identify the relationship between process parameters and property. Oxygen plasma surface treatment has been found to increase...
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