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The dc magnetization and ac spin susceptibility measurement results of MnxSi single crystals with x \(\boldsymbol \approx ~0.96\) –1 are reported. Magnetic phase diagrams for MnxSi of different Mn deficiency levels are mapped and compared. We provide strong evidence that the existence of manganese deficiency is common in the MnSi single crystals due to the high Mn vapor loss during growth, and the...
A Ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290degC. On the low temperature Ge buffer layer with pits, high quality Ge layer was grown at 600degC with a threading dislocation density of ~1times105cm-2. According to channeling and random Rutherford backscattering spectrometry spectra, a chimin value of 10% and 3.9% was found, respectively, at the Ge/Si...
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