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The formation of nanometer-scale silicon dots on ultrathin SiO2 layers has been studied by controlling the early stages of low-pressure chemical vapor deposition (LPCVD) of a monosilane gas. It has been suggested that the thermal dissociation of surface Si–O bonds plays a role in creation of nucleation sites on as-grown SiO2 and that surface Si–OH bonds formed by a dilute HF treatment or pure water...
A broad photoluminescence (PL) band at ~1.17 eV is observed for as-anodized porous Ge (PG) at room temperature. Oxidation at 600 o C induces a new intense PL band at ~2.15 eV whose spectral shape remains almost unchanged with progressive oxidation. Considering this result and the observed temperature dependence and decay time of the PL from thermally oxidized PG, it has been suggested that...
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