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The high frequency behavior of SiGe HBTs with a vertical doping profile tailored for high transit frequencies fT was investigated experimentally and theoretically for a series of layout configurations. For ft and fmax best values of 430 GHz and 315 GHz were measured on HBTs with an emitter area of 0.17 × 1.01 µm2. The contribution of device parasitics to the high frequency performance was investigated...
The base region of hetero bipolar transistors (HBTs) strongly affects the maximum cut off frequency and the ideality of the Gummel plot at very low base currents. We describe electrical characterization of the SiGe HBT layer stack for optimization and routine monitoring of the stability of epitaxial growth. For the first time we report simultaneous high frequency/low frequency metal-oxide-semiconductor...
Variants of P in situ spike doped poly-Si emitters are compared with an As implanted poly-Si emitter for use in HBTs. The main goal is the optimization of the thermal process after emitter doping. The base B diffusion is shown to be stronger influenced by the emitter dopant outdiffusion for P than for As. This effect is investigated by means of an improved B SIMS profiling, and by CV measurements...
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