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A unified drain current model for undoped or lightly doped double-gate (DG) and surrounding-gate (SRG) MOSFETs incorporating velocity saturation effect are presented in this paper. The unified charge-based core model for undoped or lightly doped DG and SRG MOSFETs is presented first. Caughey-Thomas engineering mobility model with exponent factor n=2 is then integrated self-consistently into the unified...
As one of the candidates of the next generation non-volatile memory(NVM), phase change memory(PCM) has been paid more attention. However, there are still many open issues such as numerical simulation to study. Phase transition is a temperature based process, which can be simulated by temperature profile generated by the device simulator coupled with the phase transition model. In this work, a phase...
This paper describes a web-based platform for nanoscale non-classical device modeling and circuit simulation, especially for non-classical CMOS device compact modeling and circuit performance prediction. This platform is based on program libraries, including model code files. We use SPICE as circuit simulation framework, and the Verilog-A as model design language. Based on the user input deck content,...
This paper presents a charge-based compact model for the arbitrary doped long-channel cylindrical surrounding-gate (SRG) MOSFETs. Starting from Poissonpsilas equation with fixed charge and inversion charge terms, an accurate equation of inversion charge is obtained with the full-depletion approximation. Substituting this inversion charge expression into Pao-Sahpsilas dual integral, a drain current...
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