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A fully-electronic high-speed transmission with a highly-integrated set of quadrature direct-conversion TX and RX modules in 130nm SiGe HBT technology operating in the 240 GHz transmission window is presented. In view of high packaging costs of the currently available THz communication front-ends, each of the modules is implemented as a single chip with a broadband silicon lens-integrated on-chip...
This paper presents the design and electrical characterization of a transimpedance amplifier (TIA) implemented in a complementary 0.25 µm SiGe:C BiCMOS technology which offers a fT/fmax of 110 GHz/180 GHz for the npn and 95 GHz/140 GHz for the pnp transistor, respectively. Featuring folded cascode architecture by making use of the available pnp HBTs, the amplifier exhibits a differential transimpedance...
An advanced photonic BiCMOS process is demonstrated capable, on the receiver side, for 100 Gb/s optical line rate. Key components of this process are monolithically integrated wave-guide Ge photodiodes showing more than 70 GHz bandwidth and 1 A/W responsivity, and SiGe HBTs with fT/fmax values of 240/290 GHz.
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