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Recent advances in high power millimeter wave (mmW) Gallium Nitride (GaN) technology has enabled the development of a high power solid state W-band transmitter with an unprecedented 7kW Continuous Wave (CW) output power. The transmitter coherently sums a total of 8,192 1W+ GaN Power Amplifier (PA) Monolithic Microwave Integrated Circuits (MMICs) using spatial combining. This accomplishment represents...
An advanced high power, high frequency GaN semiconductor process has made possible the design and fabrication of W-band power amplifier MMICs with unprecedented performance. The key enabling semiconductor technology is a 150 nm T-gate GaN HEMT with an output power exceeding 300mW and a peak PAE (power added efficiency) of 37%. With this process, W-band power amplifier MMICs have been designed and...
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