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7nm CMOS FinFET technology featuring EUV lithography, 4th gen. dual Fin and 2nd gen. multi-eWF gate stack is presented, providing 20% faster speed or consuming 35% less total power over 10nm technology [1]. EUV lithography, fully applied to MOL contacts and minimum-pitched metal/via interconnects, can reduce >25% mask steps with higher fidelity and smaller CD variation. AVT of 6T HD SRAM cell are...
The properties of graphene nanoribbons are dependent on both the nanoribbon width and the crystallographic orientation of the edges. Scanning tunneling microscope lithography is a method which is able to create graphene nanoribbons with well defined edge orientation, having a width of a few nanometers. However, it has only been demonstrated on the top layer of graphite. In order to allow practical...
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