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We demonstrate heralded single photon source on a silicon photonic chip by a pump interleaving technique. We have achieved 90±5% enhancement to single photon rate with only 14±2% reduction in quantum signal to noise ratio.
In this paper, we investigate a bit-error rate (BER) of an optoelectronic integrated circuit (OEIC) receiver. For this investigation, signal and noise characteristics of a Si avalanche photodetector and a high-speed electronic circuit are analyzed. Using the fabricated OEIC receiver, 12.5-Gb/s 231−1 pseudo-random binary sequence optical signal is successfully detected with BER less than 10−12 at incident...
A novel technique for fabricating high-resolution micropipette thermal sensors using inexpensive materials was developed. The technique can be implemented relatively easily in a laboratory setting. The micropipette sensors were constructed by filling a metal inside a glass micropipette and coating a thin film on the outer surface of a glass micropipette by PVD (Physical Vapor Deposition), so that...
We present a 10-Gb/s, 1×4 optical link based on a DRAM-integration-ready bulk-silicon modulator for multi-drop CPU-DRAM interconnects. The bulk-silicon modulator operated at 10 Gb/s on a die, and at 5 Gb/s in a QFP package. The 1×4 optical link was limited not by signal integrity but by optical power budget, demonstrating its scalable capacity for the future multi-drop memory bus.
AlGaN/GaN power high electron mobility transistors (HEMTs) with a Fe-doped GaN buffer on a Si substrate were presented for high power switching applications. In order to investigate the effects of an Fe-doped GaN buffer on device characteristics, HEMT devices with an Fe-doped GaN buffer on Si were fabricated alongside with the conventional devices utilizing an unintentionally doped (UID) GaN buffer...
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