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Magnetic tunnel junctions (MTJs) using perpendicular magnetic anisotropy (PMA) in CoFe(B)/ MgO interface have attracted much attention for high density magnetoresistive random access memory (MRAM) with advantages of scale-down in driving current using for spin transfer torque (STT). In perspective of reliability, further development of the magnetic anisotropy energy (Ku) is required to improve the...
Anisotropic magnetoresistance (AMR) effect in Pt/YIG system where only Pt contributed to charge transport causes much attentions. Chien regarded that the Pt has been magnetized by the YIG due to magnetic proximity effect (MPE). In contrast, Saitoh proposed a new mechanism entitled as spin Hall magnetoresistance (SMR) to explain the AMR in Pt/YIG. The key of SMR is the spin current generated by SHE...
This paper describes novel glass micropipette thermal sensor fabricated in a cost-effective manner and thermal conductivity measurement of carbon nanotubes (CNT) thin film using the developed sensor. Various micrometer-sized sensors, which range from 2 µm to 30 µm, were produced and tested. The capability of the sensor in measuring thermal fluctuation at micro level with an accuracy of ±0.01°C is...
Graphene is a new advanced material for microelectronics. Graphene films can be prepared by different techniques. One of the promising methods is the production of stable dispersions of graphene in water or organic solvents. We have developed a new approach for preparation of easily soluble expanded graphite using fluorinated graphite intercalation compounds as starting materials. Graphene sheets...
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