The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Fabricating single‐crystalline gallium nitride (GaN)‐based devices on a Si(100) substrate, which is compatible with the mainstream complementary metal‐oxide‐semiconductor circuits, is a prerequisite for next‐generation high‐performance electronics and optoelectronics. However, the direct epitaxy of single‐crystalline GaN on a Si(100) substrate remains challenging due to the asymmetric surface domains...
In article number 1905056, Xuelin Yang, Kaihui Liu, Bo Shen, and co‐workers achieve the epitaxy of single‐crystalline gallium nitride (GaN) film on a complementary metal‐oxide‐semiconductor‐compatible Si(100) substrate by applying a one‐atom‐thick single‐crystalline graphene buffer layer. The monolayer graphene provides an in‐plane driving force for the uniform alignment of nitrides domains. This...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.