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Thick GaN templates (>50 µm) were grown by hydride‐vapor‐phase epitaxy (HVPE) on the r‐plane of sapphire. While X‐ray diffraction indicates that the GaN grows with its a‐plane parallel to the r‐plane of sapphire, the surface has a triangular morphology of 120º, which is the result of the faster growth rate of the a‐plane compared to the m‐plane. Electron microscopy studies indicate that these GaN...
We report the development of AlGaN-based deep UV LEDs by RF plasma-assisted MBE. Devices emitting at 273 nm were evaluated at bare-die configuration and found to have an output power of 1.3 mW at 100 mA injection current and external quantum efficiency of 0.4%.
We report MBE growth of AlGaN structures emitting below 250 nm on SiC substrates. We found that the IQE of the MQWs and DHs is as high as 68% and 43% respectively.
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