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Wafer sized, high quality continuous films would be a key demand for MoS2 implemented in circuit application. In this study, the growth of few monolayer MoS2 on 4 inches SiO2/Si substrate were demonstrated. The MoS2 thin films were synthesized by sulfurized in a furnace from the ultra-thin MoO3 starting materials by using H2S. The obtained MoS2 thin film examined by Raman analysis and Photoluminescence...
The effect of different buffer layers on the RF losses of GaN-based high-mobility-transistors (HEMTs) on Si substrate has been studied. It is found that the electron inversion layer induced by the residual tensile stress in AlN buffer is responsible for a dominant loss factor. It is first time such mechanisms of the RF loss of GaN/Si is discussed. It is proven that using a thin high-low-high temperature...
Two inches size with high quality layered growth of MoS2 was achieved by PLD on c-plane sapphire substrate. 2∼3 monolayer MoS2 was obtained within 2 inches wafer estimated from Raman analysis and confirmed by cross-sectional view of TEM. Additionally, the oxide states of Mo 3d core level spectra of MoS2, analyzed by XPS, can be effectively reduced by adopting a post sulfurization process in H2S. The...
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