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We present a 630 GHz transmitter IC based on a 210 GHz PLL and 3rd-order sub-harmonic transmit mixer in an 130nm InP HBT process. The transmitter output can be tuned across 15 GHz with −51 dBc and −74 dBc of phase noise at 100 Hz and 10 KHz offset, respectively. Measured saturated RF power was −30 to −33 dBm, while consuming 650 mW. The transmitter IC occupies 1.37 mm2. To the authors' knowledge,...
We present a 220 GHz fundamental PLL, based on a 220 GHz VCO, 2:1 dynamic frequency divider, fifth-order sub-harmonic phase detector, active loop filter, and output amplifier, fabricated in an InP HBT technology. The measured PLL locking range was 220.0 to 225.9 GHz, with -83 dBc/Hz of phase noise at a 100 KHz offset, while consuming 465.3 mW. The PLL occupies 1.1 mm2 including pads.
We report on the development of a 0.25- InP HBT IC technology for lower end of the THz frequency band (0.3–3 THz). Transistors demonstrate an extrapolated of 800 GHz while maintaining a common-emitter breakdown voltage (BVCEO) 4 V. The transistors have been integrated in a full IC process that includes three-levels of interconnects, and backside processing. The technology...
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