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The effect of SiNx passivation thickness on the power performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) has been studied. A model is proposed to explain the surface-state dispersion and passivation of AlGaN/GaN HEMTs. Based on this model, a multidielectric passivation method has been proposed and demonstrated to both provide lower dielectric capacitance and help remove dc-RF dispersion.
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