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TiN/ZrN/high-κ (ZrLaO)/Si (MIS) structures were fabricated. Localized La-rich oxide behaving like nanocrystal (NC) has been self-formed between ZrN cap and TiN gate metal after 850°C annealing. The program speed of 1μs was achieved with capacitance ratio >3. The large C–V memory window of 2V was observed at swept voltage of ±4V. TEM analysis shows two discrete regions (NC and metal cap), which...
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