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In this work, we propose, design and simulate a new configuration of Class AB dual output (DO) second‐generation current conveyor (DO‐CCII). Two versions of this new DO‐CCII configuration are proposed: one employing 32 nm technology‐based carbon nanotube field effect transistor (CNTFET) and the other employing the conventional complementary MOS (CMOS). The HSPICE simulation studies have been performed...
In this work, we design and simulate novel 32 nm carbon nanotube field effect transistor (CNTFET) as well as complementary metal oxide semiconductor (CMOS)‐based negative class AB second generation current conveyors (CC) (CNTFET‐CCII and CMOS‐CCII−). The comparative analyses of various performance measuring parameters of both these CCII's have been performed. A significant improvement in current and...
In this work, we design and simulate a new class AB second generation current conveyor (CCII) employing 32 nm technology node carbon nanotube field effect transistors (CNTFET). The performance of the proposed CNTFET based class AB CCII (CNTFET‐CCII) has been optimized by altering the number of carbon nanotubes (CNTs) (N), CNT pitch (S), and CNT diameter (DCNT). The proposed CCII has been compared...
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