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This article analyzes the bias dependence of gate‐drain capacitance (Cgd) and gate‐source capacitance (Cgs) in the AlGaN/GaN high electron mobility transistors under a high drain‐to‐source voltage (Vds) from the perspective of channel shape variation, and further simplifies Cgd and Cgs to be gate‐to‐source voltage (Vgs) dependent only at high Vds. This method can significantly reduce the number of...
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