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Metallic Bi, as an alloying‐type anode material, has demonstrated tremendous potential for practical application of potassium‐ion batteries. However, the giant volume expansion, severe structure pulverization, and sluggish dynamics of Bi‐based materials result in unsatisfied rate performance and unstable cycling stability. Here, 2D bismuth@N‐doped carbon sheets with BiOC bond and internal void space...
Potassium‐Ion Storage
In article number 2203976, Songping Wu, Zhiguang Xu, Yurong Yan, and co‐workers successfully fabricate 2D bismuth@N‐doped carbon sheets with a powerful BiOC bond and internal void space for achieving ultrahigh rate and stable potassium‐ion storage. The influence of interface microstructure and chemical coupling on the electrochemical properties are revealed by ex/in‐situ techniques...
Hepatocellular carcinoma (HCC) is one of the most fatal malignancies with few effective treatment options all around the world. The efficacy of the arisen immune checkpoint therapy is still uncertain due to local immunosuppression. In order to further overcome T cell suppression in the tumor immune microenvironment while promoting the immune response of antigen‐presenting cells, a biointerfacing antagonizing...
Biointerfacing Nanoparticles
In article number 2105237, Dong‐Sheng Huang, Tian Yang, and co‐workers develop a strategy of targeting therapeutic nanoparticles effectively reversing the immune‐inhibiting microenvironment for enhanced PD‐L1 checkpoint combination therapy. The platelet membrane cloaked nanoparticles activate the CD8+ T lymphocytes and antigen presentation of dendritic cells as well as...
Although there are recent advances in many areas of quasi‐2D halide perovskites, photodetectors based on these materials still cannot achieve satisfactory performance for practical applications where high responsivity, fast response, self‐powered nature, and excellent mechanical flexibility are urgently desired. Herein, utilizing one‐step spin‐coating method, self‐assemble quasi‐2D perovskite films...
Doping of bulk silicon and III–V materials has paved the foundation of the current semiconductor industry. Controlled doping of 2D semiconductors, which can also be used to tune their bandgap and type of carrier thus changing their electronic, optical, and catalytic properties, remains challenging. Here the substitutional doping of nonlike element dopant (Mn) at the Mo sites of 2D MoS2 is reported...
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