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In this brief, the random dopant fluctuation (RDF)-induced threshold voltage ($V_{T}$ ) variability, on current ($I_{\mathrm {\scriptstyle ON}}$ ) variability, and $V_{T}$ mismatch in undoped channel Si gate-all-around (GAA) n-nanowire MOSFETs (n-NWFETs) are studied using coupled 3-D statistical device simulations considering quantum corrected room temperature drift-diffusion transport. The RDFs...
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