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In this paper, we present a variability-aware 3-D mixed-mode device simulation study of Si gate-all-around (GAA) nanowire <sc>mosfet</sc> (NWFET)-based 6-T static random access memory (SRAM) bit-cell stability and performance considering metal-gate granularity (MGG) induced intrinsic device random fluctuations and quantum corrected room temperature drift-diffusion transport. The impact...
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