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Epitaxial ZnO thin films have been grown on Si(111) substrates at temperatures between 550 and 700°C with an oxygen pressure of 60Pa by pulsed laser deposition (PLD). A ZnO thin film deposited at 500°C in no-oxygen ambient was used as a buffer layer for the ZnO growth. In situ reflection high-energy electron diffraction (RHEED) observations show that ZnO thin films directly deposited on Si are of...
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