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A thin SiOyNx film was inserted below a conventional SiNx antireflection coating used in c‐Si solar cells in order to improve the surface passivation and the solar cell's resistance to potential‐induced degradation (PID). The effect of varying the flow ratio of the N2O and SiH4 precursors and the deposition temperature for the SiOyNx thin film upon material properties were systematically investigated...
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