The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A unified FinFET reliability model including high K stack dynamic threshold (HKSDT), hot carrier injection (HCI), and negative bias temperature instability (NBTI) has been developed and verified by experimental data. The FinFET-based circuit performances are simulated and compared under these reliability issues by HSPICE simulator after the inclusion of the presented model.
A modeling study of dynamic threshold voltage in high K gate stack is reported in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this model is applied in FinFET reliability and circuit performances are simulated. The result shows that, the drain circuit (Id) degradation in FinFET is much more obvious than normal MOSFETs with the...
This paper studied the complication of sub-threshold slope and threshold voltage of undoped Surrounding-Gate (SRG) MOSFETs based on a rigorous classical channel potential model. The detail theoretical analysis demonstrates that the sub-threshold behavior of SRG MOSFETs strongly depends on the silicon body radius. The ideal sub-threshold slope factor S = 60 mV/Dec only appears when the body radius...
The linear cofactor difference extrema due to the nonlinearity of the MOSFET drain-current and their application to extract MOSFET parameters are presented in this brief. The extrema of drain-current are obtained by applying the linear cofactor difference operator to the drain-current versus gate voltage curve in the linear region. These extrema are directly used to find the threshold voltage and...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.