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A multiscale simulation package based on ab initio calculation is used to study the band structure effects in extremely scaled gate-all-around silicon nanowire (SNW) MOSFETs with different cross-sectional shapes. All the interactions are computed directly from ab initio method without semiempirical parameters, and the effects of crystal atom relaxations and boundary atom dangling bond saturations...
A simple top down method to fabricate an array of vertically stacked nanowires is presented. By taking advantage of the non-uniformity of the Inductive Coupled Plasma (ICP) etching process to form a scalloped sidewall followed by a subsequent stress limited oxidation step, a narrow silicon fin can be vertically patterned to form stacked nanowires with different cross-sectional shapes. The stacked...
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